描述

5SHX1445H0002 中壓變頻器開發(fā)的用于巨型電力電子成套裝置

IGCT集成門極換流晶閘管(Intergrated Gate Commutated Thyristors)是一種中壓變頻器開發(fā)的用于巨型電力電子成套裝置中的新型電力半導(dǎo)體開關(guān)器件(集成門極換流晶閘管=門極換流晶閘管+門極單元)。1997年由ABB公司提出。IGCT使變流裝置在功率、可靠性、開關(guān)速度、效率、成本、重量和體積等方面都取得了巨大進(jìn)展，給電力電子成套裝置帶來了新的飛躍。IGCT是將GTO芯片與反并聯(lián)二極管和門極驅(qū)動電路集成在一起，再與其門極驅(qū)動器在外圍以低電感方式連接，結(jié)合了晶體管的穩(wěn)定關(guān)斷能力和晶閘管低通態(tài)損耗的優(yōu)點，在導(dǎo)通階段發(fā)揮晶閘管的性能，關(guān)斷階段呈現(xiàn)晶體管的特性。IGCT具有電流大、阻斷電壓高、開關(guān)頻率高、可靠性高、結(jié)構(gòu)緊湊、低導(dǎo)通損耗等特點，而且造成本低，成品率高，有很好的應(yīng)用前景。己用于電力系統(tǒng)電網(wǎng)裝置（100MVA）和的中功率工業(yè)驅(qū)動裝置（5MW)IGCT在中壓變頻器領(lǐng)域內(nèi)成功的應(yīng)用了11年的時間（到09年為止)，由于IGCT的高速開關(guān)能力無需緩沖電路，因而所需的功率元件數(shù)目更少，運行的可靠性大大增高。

IGCT集IGBT（絕緣門極雙極性晶體管）的高速開關(guān)特性和GTO（門極關(guān)斷品閘管）的高阻斷電壓和低導(dǎo)通損耗特性于一體，一般觸發(fā)信號通過光纖傳輸?shù)絀GCT單元。在ACS6000的有緣整流單元的相模塊里，每相模塊由IGCT和二極管、鉗位電容組成，由獨立的門極供電單元GUSP為其提供能源。

5SHX1445H0002 中壓變頻器開發(fā)的用于巨型電力電子成套裝置

IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. It has been used in power system power grid device (100MVA) and medium power industrial drive device (5MW)IGCT in the field of medium voltage inverter successfully applied for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuit, so the number of power components required is less, and the reliability of operation is greatly increased.

The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate shutdown gate tube), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.

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Company Introduction:
Chengdu Sunshine Xihe Co., Ltd. specializes in one-stop procurement consulting for imported industrial spare parts, offering original equipment and professional discontinued parts services. We are committed to providing efficient and reliable automation solutions for our customers. Customer support fast responseThe network of partners spans all continentsGlobal partner networkAlways achieve more delivery, be it parts, service or speed



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