5SHY3545L0005 ABB 可控硅元件

可控硅全稱“可控硅整流元件”(Silicon Controlled Rectifier),簡寫為SCR,別名晶體閘流管(Thyristor),是一種具有三個PN結(jié)、四層結(jié)構(gòu)的大功率半導(dǎo)體器件。可控硅體積小、結(jié)構(gòu)簡單、功能強,可起到變頻、整流、逆變、無觸點開關(guān)等多種作用,因此現(xiàn)已被應(yīng)用于各種電子產(chǎn)品中,如調(diào)光燈、攝像機、無線電遙控、組合音響等??煽毓柰耆珜?dǎo)通后,流過A、K兩極的電流即為通態(tài)電流IT(On-State Current),實際應(yīng)用時,VAK通常是交流電壓(如220VAC)

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描述

因此常將此參數(shù)標(biāo)記為通態(tài)平均電流IT(RMS),指可控硅元件可以連續(xù)通過的工頻正弦半波電流(在一個周期內(nèi))的平均值,而此時流過G、K兩極的電流即為門極電流IG(Gate Current),這個門極控制電流不應(yīng)超過門極大峰值電流IGM(Forward Peak Gate Voltage)當(dāng)VAK是交流電源的負(fù)半周時,可控硅因為A、K兩極加反向電壓而阻斷,此時允許施加的大電壓稱為反向重復(fù)峰值電壓VRRM(Peak Repetitive Reverse Blocking Voltage),由于可控硅阻斷時的電阻不是無窮大,此時的電流稱之為反向重復(fù)峰值電流IRRM(Peak Repetitive Reverse Blocking Current)。這兩個值與之前介紹的IDRM、VDRM是一樣的,只不過IDRM、VDRM是在控制G極斷開、可控硅阻斷狀態(tài)下測量的,而IRRM、VRRM是在可控硅A、K極接反向電壓下測量的。如果在可控硅陽極A與陰極K間加上反向電壓時,開始可控硅處于反向阻斷狀態(tài),只有很小的反向漏電流流過。當(dāng)反向電壓增大到某一數(shù)值時,反向漏電流急劇增大,這時,所對應(yīng)的電壓稱為反向不重復(fù)峰值電壓VRSM(Peak Non-Repetitive Surge Voltage)。

5SHY3545L0005

Therefore, this parameter is often labeled as the on state average current IT (RMS), which refers to the average of the power frequency sine half wave current (within a cycle) that the thyristor component can continuously pass through. At this time, the current flowing through the G and K poles is the gate current IG (Gate Current). This gate control current should not exceed the gate maximum peak current IGM (Forward Peak Gate Voltage). When VAK is the negative half cycle of the AC power supply, the thyristor should not exceed the gate maximum peak current IGM (Forward Peak Gate Voltage) The K poles are blocked by adding a reverse voltage, and the large voltage allowed to be applied at this time is called the Peak Repetitive Reverse Blocking Voltage (VRRM). Since the resistance when the thyristor is blocked is not infinite, the current at this time is called the Peak Repetitive Reverse Blocking Current (IRRM). These two values are the same as the previously introduced IDRM and VDRM, except that IDRM and VDRM are measured under the control of G pole disconnection and thyristor blocking state, while IRRM and VRRM are measured under the reverse voltage of thyristor A and K pole connection. If a reverse voltage is applied between the anode A and cathode K of the thyristor, the thyristor begins to be in a reverse blocking state, with only a small reverse leakage current flowing through. When the reverse voltage increases to a certain value, the reverse leakage current sharply increases, and the corresponding voltage is called the Peak Non Repetitive Surge Voltage (VRSM).

5SHY3545L0014
5SHY4045L0006 3BHB030310R0001 3BHE039203R0101 GVC736CE101
5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101
5SHY3545L0014 3BHB013085R0001 3BHE039203R0101 GVC736CE101
5SHY5055L0002 3BHE019719R0101 GVC736BE101
5SHY3545L0016 3BHB020720R0002 3BHE019719R0101 GVC736BE101
5SHY4045L0004 3BHB021400R0002 3BHE039203R0101 GVC736CE101
5SHY3545L0016 3BHB020720R0002 3BHE039203R0101 GVC736CE101
5SHY4045L0003 3BHB021400 3BHE019719R0101 GVC736BE101
5SHY3545L0010 3BHB013088R0001 3BHE009681R0101 GVC750BE101
5SHY3545
5SHY35L4503 3BHB004693R0001 3BHB004692R0002 5SXE01-0127
5SHY3545L0009
5SHY4045L0001 3BHB018162R0001 3BHE009681R0101 GVC750BE101
5SHY4045L0001? 3BHB018162R0001
5SHY6545L0001 AC10272001R0101 5SXE10-0181
5SHY35L4520 5SXE10-0181 AC10272001R0101
5SHY3545L0016? 3BHB019719R0101 GVC736BE101 5SXE06-0160
5SHY5045L0020
5SHY35L4512
5SHY35L4520
5SHY35L4510
5SHY3545L0005
5SHY3545L0003
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