5SHY6545L0001 AC10272001R0101 5SXE10-0181 ABB 可控硅晶體模塊

IGCT與GTO相似,也是四層三端器件, GCT內(nèi)部由成千個GCT組成,陽極和門極共用,而陰極并聯(lián)在-起。 與GTO有重要差別的是IGCT陽極內(nèi)側(cè)多了緩沖層,以透明(可穿透)陽極代替GTO的短路陽極。導(dǎo)通機理與GTO完全一樣, 但關(guān)斷機理與GTO完全不同,在IGCT的關(guān)斷過程中,GCT能瞬間從導(dǎo)通轉(zhuǎn)到阻斷狀態(tài),變成一個pnp晶體管以后再關(guān)斷,所以它無外加du/dt限制;而GTO必須經(jīng)過一個既非導(dǎo)通又非關(guān)斷的中間不穩(wěn)定狀態(tài)進行轉(zhuǎn)換(即”GTO區(qū)”),所以GTO需要很大的吸收電路來抑制重加電壓的變化率du/dt。阻斷狀態(tài)下IGCT的等效電路可認(rèn)為是一個基極開路、 低增益pnp晶體管與棚極電源的串聯(lián)。

分類:

描述

IGCT使變流裝置在功率、可靠性、開關(guān)速度、效率、成本、重量和體積等方面都取得了巨大進展,給電力電子成套裝置帶來了新的飛躍。IGCT是將GTO芯片與反并聯(lián)二極管和柵極驅(qū)動電路集成在一起, 再與其柵極驅(qū)動器在外圍以低電感方式連接,結(jié)合了晶體管的穩(wěn)定關(guān)斷能力和晶閘管低通態(tài)損耗的優(yōu)點,在導(dǎo)通階段發(fā)揮晶閘管的性能,關(guān)斷階段呈現(xiàn)晶體管的特性。IGCT具有電流大、 電壓高、開關(guān)頻率高、可靠性高、結(jié)構(gòu)緊湊、損耗低等特點,而且造成本低,成品率高,有很好的應(yīng)用前景。采用晶閘管技術(shù)的GTO是常用的大功率開關(guān)器件,它相對于采用晶體管技術(shù)的IGBT在截止電壓上有更高的性能,曠泛應(yīng)用的標(biāo)準(zhǔn)GTO驅(qū)動技術(shù)造成不均勻的開通和關(guān)斷過程,需要高成本的dv/dt和di/dt吸收電路和較大功率的柵極驅(qū)動單元,因而造成可靠性下降,價格較高,也不利于串聯(lián)。但是,在大功率MCT技術(shù)尚未成熟以前,IGCT已經(jīng)成為高壓大功率低頻交流器的優(yōu)選方案。

5SHY6545L0001 AC10272001R0101 5SXE10-0181

IGCT has made significant progress in power, reliability, switching speed, efficiency, cost, weight, and volume of converter devices, bringing a new leap to power electronic complete sets of devices. IGCT integrates GTO chips with anti parallel diodes and gate drive circuits, and then connects them with their gate drivers in a low inductance manner on the periphery. It combines the stable turn-off ability of transistors and the advantages of low on state losses of thyristors, exerting the performance of thyristors during the conduction phase, and presenting transistor characteristics during the turn-off phase. IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low losses, and low manufacturing cost, high yield, and has good application prospects. GTO using thyristor technology is a commonly used high-power switching device, which has higher performance in cutoff voltage compared to IGBT using transistor technology. The widely used standard GTO driving technology causes uneven opening and closing processes, requiring high cost dv/dt and di/dt absorption circuits and high-power gate driving units, resulting in reduced reliability, high price, and unfavorable series connection. However, before the high-power MCT technology was mature, IGCT had become the preferred solution for high-voltage high-power low-frequency AC converters.

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Company Introduction:
Chengdu Sunshine Xihe Co., Ltd. specializes in one-stop procurement consulting for imported industrial spare parts, offering original equipment and professional discontinued parts services. We are committed to providing efficient and reliable automation solutions for our customers. Customer support fast responseThe network of partners spans all continentsGlobal partner networkAlways achieve more delivery, be it parts, service or speed



始終實現(xiàn)更多的交付,無論是零件、服務(wù)還是速度