描述

PXIE-4143 4通道，精密PXI源測(cè)量單元

美國(guó)國(guó)家儀器PXIe-4143 PXI源測(cè)量單元

PXIe-4143(部件號(hào):782431-01)源測(cè)量單元(SMU)包含一個(gè)實(shí)用通道，可以提供16位設(shè)定值和估計(jì)分辨率的電流或電壓。用戶可以利用這個(gè)輸出，它給出了高達(dá)6v和1a，作為一個(gè)補(bǔ)充電源到SMU通道。應(yīng)用，如晶體管的特性，需要一個(gè)穩(wěn)定的電流或電壓，同時(shí)掃描另一個(gè)電流或電壓，可以顯著受益于降低復(fù)雜性，空間和成本的模塊提供。對(duì)于并行測(cè)試應(yīng)用，用戶可以在單個(gè)PXI框架中使用17個(gè)NI PXIe-4143模塊，在19英寸和4U的空間中使用17個(gè)SMU通道和17個(gè)可編程電源通道。

該P(yáng)XIe 4143 SMU的兩個(gè)通道可以作為恒定電壓源或穩(wěn)定電流源，對(duì)任何模式都具有可移動(dòng)的一致性限制。此外，用戶還可以在SMU通道上賦予遙感功能，以提高被測(cè)設(shè)備輸出/電壓估計(jì)的準(zhǔn)確性，以實(shí)現(xiàn)高精度應(yīng)用。

PXIe-4143 SMU的估計(jì)策略通常是基于將電流運(yùn)動(dòng)添加到雙極電路的標(biāo)準(zhǔn)中，然后再添加到電壓響應(yīng)估計(jì)中。如果被測(cè)器件(DUT)具有低電阻，則使用此策略;當(dāng)被測(cè)件內(nèi)阻較高時(shí)，進(jìn)行電壓運(yùn)動(dòng)相加，然后估計(jì)電流反應(yīng)。

PXIE-4143 4通道，精密PXI源測(cè)量單元

National Instruments PXIe-4143 PXI Source Measure Unit

The PXIe-4143 (Part Number: 782431-01) Source Measure Unit (SMU) incorporates a utility channel that can supply current or voltage with a 16-bit setpoint and an estimation resolution. The user can utilize this output, which gives up to 6 V and 1 A, as a complementary power supply to the SMU channel. Applications such as the characterization of transistors that require a steady current or voltage while sweeping another current or voltage can significantly profit by the lessened complexity, space, and cost offered by this module. For parallel test applications, the user can utilize 17 NI PXIe-4143 modules in a single PXI frame for 17 SMU channels and 17 programmable power supply channels in a 19-inch and 4U space.

The two channels of this PXIe 4143 SMU can act as a constant voltage source or as a steady current source, with a movable consistence restrict for any of the modes. Also, the user can empower remote sensing on the SMU channel to augment the exactness of output/voltage estimation on the gadget under test for high accuracy applications.

The PXIe-4143 SMU has estimation strategies that are generally based on the addition of current motions into the standard of the bipolar circuit and afterward into the voltage response estimation. This strategy is utilized if the device under test (DUT) has a low resistance; in case of high internal resistance of DUT, the addition of voltage motions is performed and after that the current reaction is estimated.

 

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